Power module and manufacturing method thereof

ABSTRACT

A power module and a manufacturing method thereof are disclosed. The power module includes a magnetic component, a bare power chip and a conductive set. The magnetic component includes a first surface and a second surface opposite to each other. The bare power chip is disposed on the magnetic component and includes a third surface and a fourth surface opposite to each other. The conductive set is disposed on the magnetic component and electrically connected with the magnetic component and the bare power chip. The third or fourth surface of the bare power chip is at least partially attached on the first or second surface of the magnetic component, and at least partially included in a projected envelopment of the corresponding first or second surface of the magnetic component, so as to facilitate the magnetic component to support the bare power chip.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional application of U.S. application Ser.No. 16/130,850 filed on Sep. 13, 2018 and entitled “POWER MODULE ANDMANUFACTURING METHOD THEREOF”, which claims priority to China PatentApplication No. 201810866709.8 filed on Aug. 1, 2018 and is acontinuation-in-part application of U.S. application Ser. No. 15/158,016filed on May 18, 2016 and entitled “MAGNETIC ASSEMBLY”, which claimspriority to China Patent Application No. 201610120906.6 filed on Mar. 3,2016. The entire contents of the above-mentioned patent applications areincorporated herein by reference for all purposes.

FIELD OF THE INVENTION

The present disclosure relates to a power module, and more particularlyto an optimized power module and a manufacturing method thereof.

BACKGROUND OF THE INVENTION

With the increasing requests of human intelligent life, the increasingrequirements of developing intelligent products, and the growing ofInternet of Things (IoT), the requirements of data transmission andprocessing are increasing day by day. In a centralized data processingcenter, servers are key elements and have motherboards including CPU,chipsets, and memories, such as digital chips for data processing withpower supplies and necessary peripheral elements. For increasing theprocessing capacity of servers in a unit volume, the number of digitalchips and the density of integration are increased correspondingly.Consequently, the ratio of occupied space and power loss are increased.Therefore, the power supply (also called as onboard power due to thatthe power supply and the digital chips are disposed on the samemotherboard) employed by the system for providing power to the digitalchips is expected to have higher efficiency, higher power density andsmaller occupied space, so as to facilitate the entire server and eventhe entire data center to save energy and minimize the occupied area.

Generally, the power with the low voltage and the large current isprovided to the above digital chips. For reducing the influences ofpower loss and impedance of the output wire, power supplies capable ofproviding power to the digital chips directly are disposed on themotherboard and located as close as possible to the digital chips.Therefore, the power supply capable of providing power to the digitalchips directly is called as point of the load (POL). The above-mentionedpower supply has an input power provided from other power source. Thetypical POL has an input voltage about 12 volts.

On the other hand, for achieving the applications in a distributed dataprocessing terminal, like smart phone, the constituent elements and thedigital chips have to be integrated into a small space and keep workingcontinuously. In addition, lower operating voltage is provided to theconstituent elements and the digital chips. Generally, the loweroperating voltage is provided by an energy storage device such as 3V to5V battery. Therefore, the power supply tends to be requested with ahigh efficiency and a high power density.

Recently, since the switching power supplies can exhibit betterconversion efficiency than the linear power supplies, the application ofswitching mode power supplies is also becoming more widespread. However,compared with the linear power supply, the circuit of the switching modepower supply is more complicated, and the magnetic components/capacitorsare usually utilized as the energy storage/filtering function therein,so that it is not easy to achieve chip level integration.

At present, in a low-voltage DC/DC converter, a buck converter isusually employed to provide various output voltages ranged from 0 voltto 5 volts for the corresponding digital chips. FIG. 1 shows a circuitdiagram of a typical buck converter. As shown in FIG. 1, the buckconverter includes an input filter capacitor Cin, a main switch Q1, anauxiliary switch Q2, an inductor L and an output capacitor Co. The inputfilter capacitor Cin is electrically connected with a power source forreceiving an input voltage Vin. The main switch Q1 includes one endconnected to the input filter capacitor Cin and another end connected tothe inductor L. The main switch Q1 performs a turn-on and turn-offoperation to convent the power from the input to output and adjust theoutput voltage and the output current. Usually, the main switch Q1 is ametal oxide semiconductor field effect transistor (MOSFET). Theauxiliary switch Q2 includes one end connected to one node of the mainswitch Q1 and the inductor L, and another end is grounded. The auxiliaryswitch Q2 provides a path for the inductor L to release energy and keepa continuous output current, wherein the auxiliary switch Q2 can be adiode. In order to reduce the loss, the auxiliary switch Q2 can also bea metal oxide semiconductor field effect transistor (MOSFET) and performsynchronous rectification control to achieve near-ideal diode function.The inductor L includes one end connected to the node of the main switchQ1 and the auxiliary switch Q2, and another end connected to the outputcapacitor Co. The inductor L and the output capacitor Co cooperativelyfilter the output voltage with square wave formed by the alternativeswitching operation of the main switch Q1 and the auxiliary switch Q2into an average value, that is, a direct current output to an outputvoltage Vout. The output capacitor Co is configured to absorb thecurrent ripple outputted from the inductor L such that the voltageripple of the output voltage Vout is less than a required value. Theoutput voltage Vout of the buck converter can be provided to a load RL,i.e. the digital chip or a CUP.

In order to further improve the conversion efficiency and power densityof the power converter, the prior art is individually optimized from theperspectives of, for example, a magnetic component, a bare power chip,and a capacitor component. However, with the advancement of technology,the independent optimization of a single component has gradually reachedthe limit. It is impossible to further achieve high efficiency and highpower density by optimizing a single component individually.

Therefore, there is a need of providing a power module and amanufacturing method thereof in order to achieve the purposes of highefficiency and high power density, and overcome the drawbacksencountered by the prior art.

SUMMARY OF THE INVENTION

An object of the present disclosure is to provide a power module and amanufacturing method thereof. With a magnetic component carrying a barepower chip thereon, the connection of the magnetic component and thebare power chip can be optimized and integrated, so that a power modulewith high efficiency and high power density is achieved. The occupiedspace of the power module relative to the system motherboard can bedecreased, so that the products with the power module is morecompetitive.

Another object of the present disclosure is to provide a power moduleand a manufacturing method thereof. The optimized and integrated powermodule can be varied to meet different application requirements,increase the design variability and further optimize the circuitcharacteristics of the power module. Meanwhile, more functions areintegrated into the power module.

The present disclosure further provides a power module and amanufacturing method thereof. By conjoining into a connection panel, itsimplifies the art of carrying the bare power chip on the magneticcomponent, so as to improve the production efficiency, and facilitate toachieve the purposes of assembling the optimized power module andreducing the manufacturing cost thereof.

In accordance with an aspect of the present disclosure, a power moduleis provided. The power module includes a magnetic component, a barepower chip and a conductive set. The magnetic component includes a mainbody, a winding set, a first surface and a second surface. The windingset winds on the main body, and the first surface is opposite to thesecond surface. The bare power chip is disposed on the magneticcomponent and includes a third surface and a fourth surface. The thirdsurface is opposite to the fourth surface. The conductive set isdisposed on the magnetic component and electrically connected with themagnetic component and the bare power chip. One of the third surface andthe fourth surface of the bare power chip is at least partially attachedon one of the first surface and the second surface of the magneticcomponent, and one of the third surface and the fourth surface of thebare power chip is at least partially included in a projectedenvelopment of the corresponding one of the first surface and the secondsurface of the magnetic component, so as to facilitate the magneticcomponent to support the bare power chip.

In accordance with another aspect of the present disclosure, amanufacturing method of a power module is provided. The manufacturingmethod includes steps of: (a) providing plural magnetic components,wherein each of the plural magnetic components includes a first surfaceand a second surface and the first surface is opposite to the secondsurface; (b) forming at least one insulation layer around the pluralmagnetic components to conjoin the plural magnetic components into aconnection panel, wherein the first surfaces of the plural magneticcomponents are coplanar or the second surfaces of the plural magneticcomponents are coplanar; (c) providing plural bare power chips disposedcorrespondingly on the plural magnetic components, wherein each of theplural bare power chips includes a third surface and a fourth surfaceand the third surface is opposite to the fourth surface, wherein one ofthe third surface and the fourth surface of the bare power chip is atleast partially attached on one of the first surface and the secondsurface of the corresponding magnetic component, and one of the thirdsurface and the fourth surface of the bare power chip is at leastpartially included in a projected envelopment of the corresponding oneof the first surface and the second surface of the correspondingmagnetic component, so as to facilitate the corresponding magneticcomponent to support the bare power chip; (d) forming at least onesecond insulation layer to cover the plural bare power chips; (e)forming plural conductive sets disposed on the at least one secondinsulation layer, wherein the plural conductive sets are spatiallycorresponding to and electrically connected with the plural bare powerchips and the plural magnetic components; and (f) dividing the at leastone first insulation layer and the at least one second insulation layerto obtain plural power modules.

In accordance with a further aspect of the present disclosure, amanufacturing method of a power module is provided. The manufacturingmethod includes steps of: (a) providing an auxiliary film and pluralmagnetic components and arranging the plural magnetic components on theauxiliary film to form a connection panel, wherein each of the pluralmagnetic components includes a first surface and a second surface andthe first surface is opposite to the second surface, wherein the secondsurfaces of the plural magnetic components are attached on the auxiliaryfilm; (b) providing plural bare power chips disposed correspondingly onthe plural magnetic components, wherein each of the plural bare powerchips includes a third surface and a fourth surface and the thirdsurface is opposite to the fourth surface, wherein one of the thirdsurface and the fourth surface of the bare power chip is at leastpartially attached on one of the first surface and the second surface ofthe corresponding magnetic component, and one of the third surface andthe fourth surface of the bare power chip is at least partially includedin a projected envelopment of the corresponding one of the first surfaceand the second surface of the corresponding magnetic component, so as tofacilitate the corresponding magnetic component to support the barepower chip; (c) forming at least one first insulation layer to cover theplural magnetic components and the plural bare power chips; (d) formingplural conductive sets disposed on the at least one first insulationlayer, wherein the plural conductive sets are spatially corresponding toand electrically connected with the plural bare power chips and theplural magnetic components; and (e) dividing the at least one firstinsulation layer and the auxiliary film to obtain plural power modules.

In accordance with other aspect of the present disclosure, a powermodule is provided. The power module includes a magnetic component, abare power chip, a first connection component and a second connectioncomponent. The magnetic component includes a main body, at least onewinding set, a first surface and a second surface. The at least windingset winds on the main body, and the first surface is opposite to thesecond surface. The bare power chip is disposed on the magneticcomponent and includes a third surface and a fourth surface. The thirdsurface is opposite to the fourth surface. The first connectioncomponent is electrically connected with the bare power chip and thesecond connection component is electrically connected with the magneticcomponent. The first connection component connected with the at leastone bare power chip has a height less than a height of the secondconnection component connected with the at least one magnetic component.One of the third surface and the fourth surface of the bare power chipis at least partially attached on one of the first surface and thesecond surface of the magnetic component, and one of the third surfaceand the fourth surface of the bare power chip is at least partiallyincluded in a projected envelopment of the corresponding one of thefirst surface and the second surface of the magnetic component, so as tofacilitate the magnetic component to support the bare power chip.

In accordance with other aspect of the present disclosure, amanufacturing method of a power module is provided. The manufacturingmethod includes steps of: (a) providing an auxiliary film and pluralmagnetic components, and arranging the plural magnetic components on theauxiliary film to form a connection panel, wherein each of the pluralmagnetic components includes a first surface and a second surface andthe first surface is opposite to the second surface, wherein the secondsurfaces of the plural magnetic components are attached on the auxiliaryfilm; (b) providing plural bare power chips disposed correspondingly onthe plural magnetic components, wherein each of the plural bare powerchips includes a third surface and a fourth surface and the thirdsurface is opposite to the fourth surface, wherein one of the thirdsurface and the fourth surface of the bare power chip is at leastpartially attached on one of the first surface and the second surface ofthe corresponding magnetic component, and one of the third surface andthe fourth surface of the bare power chip is at least partially includedin a projected envelopment of the corresponding one of the first surfaceand the second surface of the corresponding magnetic component, so as tofacilitate the corresponding magnetic component to support the barepower chip; (c) providing plural connection components spatiallycorresponding to and electrically connected with the plural bare powerchips and the plural magnetic components, respectively; and (d) removingthe auxiliary film to obtain plural power modules.

The above contents of the present disclosure will become more readilyapparent to those ordinarily skilled in the art after reviewing thefollowing detailed description and accompanying drawings, in which:

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a circuit diagram of a typical buck converter;

FIG. 2 is a schematic cross-sectional view illustrating a power moduleaccording to a first embodiment of the present disclosure;

FIG. 3A is a schematic cross-sectional view illustrating a magneticcomponent according to a first embodiment of the present disclosure;

FIG. 3B is a schematic cross-sectional view illustrating a magneticcomponent according to a second embodiment of the present disclosure;

FIG. 3C is a schematic perspective view illustrating a magneticcomponent according to a third embodiment of the present disclosure;

FIGS. 4A to 4F are schematic cross-sectional views illustrating theprocesses of the manufacturing method of the power module according to afirst embodiment of the present disclosure;

FIGS. 5A to 5G are schematic cross-sectional views illustrating theprocesses of the manufacturing method of the power module according to asecond embodiment of the present disclosure;

FIGS. 6A to 6F are schematic cross-sectional views illustrating theprocesses of the manufacturing method of the power module according to athird embodiment of the present disclosure;

FIG. 7 is a schematic cross-sectional view illustrating a connectionpanel formed by the plural magnetic components and plural components;

FIG. 8 is a schematic cross-sectional view illustrating a power moduleaccording to a second embodiment of the present disclosure;

FIGS. 9A to 9D are schematic cross-sectional views illustrating theprocesses of the manufacturing method of the power module according to afourth embodiment of the present disclosure.

FIG. 10 is a schematic cross-sectional view illustrating a power moduleaccording to a third embodiment of the present disclosure;

FIG. 11 is a schematic cross-sectional view illustrating a power moduleaccording to a fourth embodiment of the present disclosure;

FIG. 12 is a schematic cross-sectional view illustrating a power moduleaccording to a fifth embodiment of the present disclosure;

FIG. 13 is a schematic cross-sectional view illustrating a power moduleaccording to a sixth embodiment of the present disclosure;

FIG. 14 is a schematic cross-sectional view illustrating a power moduleaccording to a seventh embodiment of the present disclosure;

FIG. 15 is a schematic cross-sectional view illustrating a power moduleaccording to an eighth embodiment of the present disclosure;

FIG. 16 is a schematic cross-sectional view illustrating a power moduleaccording to a ninth embodiment of the present disclosure;

FIG. 17 is a schematic cross-sectional view illustrating a power moduleaccording to a tenth embodiment of the present disclosure;

FIG. 18 is a schematic cross-sectional view illustrating a power moduleaccording to an eleventh embodiment of the present disclosure;

FIG. 19 is a schematic cross-sectional view illustrating a power moduleaccording to a twelfth embodiment of the present disclosure;

FIG. 20 is a schematic cross-sectional view illustrating a power moduleaccording to a thirteenth embodiment of the present disclosure;

FIG. 21 is a schematic cross-sectional view illustrating a power moduleaccording to a fourteenth embodiment of the present disclosure;

FIG. 22 is a schematic cross-sectional view illustrating a power moduleaccording to a fifteenth embodiment of the present disclosure;

FIG. 23 is a schematic cross-sectional view illustrating a power moduleaccording to a sixteenth embodiment of the present disclosure;

FIG. 24 is a schematic cross-sectional view illustrating a power moduleaccording to a seventeenth embodiment of the present disclosure;

FIG. 25A is a circuit diagram illustrating multiple sets of switchingdevices and one inductor configured within the power module of thepresent disclosure;

FIG. 25B is a circuit diagram illustrating one set of switching deviceand multiple inductors configured within the power module of the presentdisclosure; and

FIG. 25C is a circuit diagram illustrating multiple sets of switchingdevices and multiple inductors configured within the power module of thepresent disclosure.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

The present disclosure will now be described more specifically withreference to the following embodiments. It is to be noted that thefollowing descriptions of preferred embodiments of this disclosure arepresented herein for purpose of illustration and description only. It isnot intended to be exhaustive or to be limited to the precise formdisclosed.

FIG. 2 is a schematic cross-sectional view illustrating a power moduleaccording to a first embodiment of the present disclosure. The powermodule 1 includes a magnetic component 10, a bare power chip 20 and aconductive set 40. The magnetic component 10 includes a first surface11, a second surface 12, at least one winding set 13 and a main body 14.The winding set 13 winds on the main body 14. The bare power chip 20includes a third surface 21 and a fourth surface 22. The bare power chip20 is disposed on the magnetic component 10. In the embodiment, thefourth surface 22 of the bare power chip 20 is mounted on the firstsurface 11 of the magnetic component 10 through an adhesion layer 30.Moreover, at least a part of the fourth surface 22 of the bare powerchip 20 is included in a projected envelopment of the first surface 11of the magnetic component 10. A first insulation layer 51 is furtherformed around the surrounded lateral walls of the magnetic component 10to cover the periphery of the magnetic component 10 by means of forexample but not limited to molding, so as to achieve the function ofsurrounding protection. In the embodiment, the bare power chip 20 can befor example a bare power semiconductor chip. The bare power chip 20 isfurther covered by a second insulation layer 52 and electricallyconnected with the magnetic component 10 through the conductive set 40.The conductive set 40 can be for example a metalized structure, whichincludes at least two conductive vias 41 and a metallization layer 42 toconnect with the leading pin of the first surface 11 of the magneticcomponent 10 and the electrode of the third surface 21 of the bare powerchip 20. Thus, to fan-out the electrode of the bare power chip 20 isachieved. The disposition of the at least two conductive vias 41 and themetallization layer 42 can be implemented by forming through vias on thesecond insulation layer 52 and then metalizing. The width and depth ofthe through vias and the thickness of the metallization layer isadjustable according to the practical requirements. The presentdisclosure is not limited thereto. It should be emphasized that in theembodiment, the bare power chip 20 can be for example a Si MOSFET, GaNswitching components, SiC MOSFET and so on. The bare power chip 20 canbe further integrated with function of driving and control. The barepower chip 20 can be a single power device and includes a half bridgecircuit or a plurality of half bridge circuits. The present disclosureis not limited thereto.

Please refer to FIGS. 1 and 2. In the embodiment, the bare power chip 20can include for example two switching devices, which are a main switchQ1 and an auxiliary switch Q2. The node between the main switch Q1 andthe auxiliary switch Q2 are connected with one end of the inductor Lthrough the metallization layer. Another end of the inductor L is anoutput Vout. Other terminals, such as Vin, GND and other driving controlelectrode of the bare power chip 20 can be fan-outed through themetallization layer, but not redundantly described herein.

Notably, in the power module, since the bare power chip 20 is directlyattached on the magnetic component 10, the magnetic component 10 canprovide a sufficient mechanical strength to support the bare power chip20, and the package of the bare power chip 20 on the magnetic component10 can be implemented by the second insulating material layer 52.Compared to an individually packaged power semiconductor device, thebare power chip 20 of the present disclosure does not need to beindividually packaged to provide an additional mechanical strength forsupport. Thus, the bare power chip 20 can be implemented by, forexample, a thinner bare chip, the thickness of which is, for example,200 μm or less. In a preferred embodiment, the thickness of the barechip may be 100 μm or less. Moreover, for example, in the applicationsof the low voltage field (within 100V), the thickness of the secondinsulation layer 52 exceeding the surface of the bare chip andsatisfying the insulation requirements is typically within 50 μm.Therefore, by stacking the bare power chip 20 and the magnetic component10, it facilitates the assembly structure of the power module 1 toreduce the occupied footprint significantly. In addition, due to theintegrated structural design, it facilitates the power module 1 toeliminate some stacking materials (such as the soldering layers used forsoldering the semiconductor devices on the motherboards in assemblies ofdiscrete components), and reduce the required thickness, which ensuresto provide an extra strength for individual support. Since the thicknessof the power module 1 of the present disclosure in the height directionstill ensures a relatively high level mechanical supporting, itfacilitates the power module 1 to achieve the purposes of improving thepower density and reducing the occupied space.

Moreover, it should be emphasized that the magnetic component 10 can beadjustable according to the practical requirements in the embodiment.The magnetic component 1 can be, for example, a low temperature co-firedceramic (LTCC) inductor, a compression molding inductor or a winding andmagnetic assembled inductor or a transformer. FIG. 3A is a schematiccross-sectional view illustrating a magnetic component according to afirst embodiment of the present disclosure. FIG. 3B is a schematiccross-sectional view illustrating a magnetic component according to asecond embodiment of the present disclosure. FIG. 3C is a schematicperspective view illustrating a magnetic component according to a thirdembodiment of the present disclosure. As shown in FIGS. 3A to 3C, themagnetic component 10 includes a first surface 11, a second surface 12,at least one winding set 13 and a main body 14. The at least one windingset 13 can be for example, a single-turn or multi-turn winding formed bya copper bar, or a single-turn or multi-turn winding wound by a coil andformed on the main body 14. The main body 14 can be formed by forexample a magnetic material such as a powder core material or a ferritematerial. In the first embodiment shown in FIG. 3A, the electrode of themagnetic component 10 a can be led out along the lateral wall of themain body 14 and disposed on the first surface 11 of the magneticcomponent 10 a. In the second embodiment shown in FIG. 3B, the electrodeof the magnetic component 10 b can be led out through the conductive via15 and disposed on the first surface 11 of the magnetic component 10 b.Moreover, in the third embodiment shown in FIG. 3C, the magneticcomponent 10 c forms an integral inductor or transformer having windings13 on the structure of the main body 14 by, for example, drilling andmetallization processes. On the other embodiments, the magneticcomponent 10 can have multiple individual functional magnetic units ormultiple magnetic units with mutual coupling integrated in a singlestructure, but the present disclosure is not limited thereto. The powermodule 1 in the embodiment of the present disclosure is described bytaking a compression molded inductor with a copper bar winding as anexample. The electrode of the magnetic component 10 is taken out to bedisposed on the first surface 11 as an example. Relative to thedisposition of the bare power chip 20, the electrode of the magneticcomponent 10 can be disposed on for example one, two, three or foursides. The present disclosure is not limited thereto. While in the powermodule 1 with multiple outputs, the magnetic component 10 can be forexample as a combination of a plurality of individual magneticcomponents 10, and more particularly a combined single magneticcomponent 10. When the electrodes of the magnetic component 10 isnumerous, the electrodes of the magnetic component 10 can be distributednot only on multiple sides of the bare power chip 20, but also inmultiple rows and columns on the same side of the bare power chip 20.The present disclosure is not limited thereto, and not redundantlydescribed herein.

Based on the power module 1 of the foregoing embodiment, the presentdisclosure also provides a manufacturing method of the power module.FIGS. 4A to 4F are schematic cross-sectional views illustratingprocesses of a manufacturing method of the power module according to afirst embodiment of the present disclosure. Please refer to FIGS. 2 and4A to 4F.

Firstly, as shown in FIG. 4A, the second surfaces 12 of plural magneticcomponents 10 are attached on an auxiliary film 50. Thereafter, as shownin FIG. 4B, the plural magnetic components 10 and a first insulationlayer 51 are conjoined together to form a connection panel, and thefirst surfaces 11 of the plural magnetic components 10 are exposed. Theart of conjoining the plural magnetic components 10 and the firstinsulation layer 51 into the connection panel can be implemented bytransfer molding, sheet molding, dust molding, liquid molding orpotting. The present disclosure is not limited thereto. When the pluralmagnetic components 10 are connected to form the connection panel, asshown in FIG. 4C, plural bare power chips 20, such as bare powersemiconductor chips, are correspondingly mounted on the plural magneticcomponents 10 of the connection panel. In the embodiment, the fourthsurfaces 22 of the bare power chips 20 are correspondingly attached tothe first surfaces 11 of the plural magnetic components 10,respectively. The adhesion layer 30 can be for example a die attachfilm, a die attach paste, a thermal paste or a silver paste. Then, asshown in FIG. 4D, the plural bare power chips 20 are correspondingdisposed on the first surfaces 11 of the magnetic components 10, and asecond insulation layer 52 is formed on the first surfaces 11 of themagnetic components 10 to cover the bare power chips 20. Thereafter, asshown in FIG. 4E, after plural through vias are formed on the secondinsulation layer 52 by means of laser drilling or photo etching, pluralconductive vias 41 and a metallization layer 42 (referring to FIG. 2)are formed within the plural through vias and the surface of the secondinsulation layer 52 by means of metallization, so as to construct theconductive sets 40. The conductive set 40 is utilized to connect theleading pin on the first surface 11 of the magnetic component 10 withthe electrode on the third surface 21 of the bare power chip 20.Consequently, to fan-out the electrode of the bare power chip 20 isachieved. In the embodiment, the metallization can include steps of forexample sputtering or electroless plating to form an initial conductivelayer required for electroplating firstly, and then forming the patternby thickening under the definition of the mask pattern or by etchingafter the entire surface plated to achieve a high thickness. The presentdisclosure is not limited thereto. Finally, as shown in FIG. 4F, theconnection panel is divided to form plural individual power modules 1.Since the plural power modules 1 are produced through the connectionpanel, it benefits to achieve high production efficiency, meetproduction capacity requirements effectively and reduce manufacturingcosts. In other embodiment, as shown in FIG. 4B, after forming theconnection panel with the plural magnetic components 10 by, for example,a transfer molding process, a planarization process is further includedto solve the problems of warping and overflowing after the molding,thereby obtaining a flat surface for subsequent processes. Furthermore,the first surfaces 11 of the plural magnetic components 10 are coveredby the first insulation layer 51. In that, the first insulation layer 51may achieve an effect of eliminating the height difference caused by themanufacture of magnetic components, so that it facilitates thedisposition of the insulation layer and provides a flat surface forsubsequent processes, for example attaching the bare power chips 20 onthe plural magnetic components 10 of the connection panel. Moreover, thefirst insulation layer 51 covered on the first surface 11 of themagnetic component 10 won't be removed or removed partially, in thesubsequent processes. In other embodiment, the surfaces may be subjectedto roughening treatment or activation treatment, so as to increase thebonding force between the layers. Alternatively, after conjoining theplural magnetic components 10 to form the connection panel (referring toFIG. 4B), the auxiliary film 50 can be removed in any subsequentprocesses according to the practical requirements. The presentdisclosure is not limited thereto, and not redundantly described herein.

FIGS. 5A to 5G are schematic cross-sectional views illustrating theprocesses of the manufacturing method of the power module according to asecond embodiment of the present disclosure. In the embodiment, thestructures, elements and functions of the manufacturing method of thepower module 1 are similar to those of the manufacturing method of thepower module 1 in FIGS. 4A to 4F, and are not redundantly describedherein. Please refer to FIGS. 2 and 5A to 5G. Firstly, as shown in FIG.5A, the first surfaces 11 of the plural magnetic components 10 areattached on an auxiliary film 50. Thereafter, as shown in FIG. 5B, theplural magnetic components 10 and a first insulation layer 51 areconjoined together to form a connection panel. Then, as shown in FIG.5C, the auxiliary film 50 is removed to expose the first surfaces of theplural magnetic components 10 of the connection panel, and the entireconnection panel is turned over. After the connection panel is formedwith the plural magnetic components 10, as shown in FIG. 5D, the pluralbare power chips 20, for example the power semiconductor chips, arecorresponding disposed on the first surfaces 11 of the magneticcomponents 10. Thereafter, as shown in FIG. 5E, the plural bare powerchips 20 are corresponding disposed on the first surfaces 11 of themagnetic components 10, and a second insulation layer 52 is formed onthe first surfaces 11 of the magnetic components 10 to cover the barepower chips 20. Then, as shown in FIG. 5F, the plural conductive sets 40are formed and utilized to connect the leading pin on the first surface11 of the magnetic component 10 with the electrode on the third surface21 of the bare power chip 20. Consequently, to fan-out the electrode ofthe bare power chip 20 is achieved. Finally, as shown in FIG. 5G, theconnection panel is divided to form plural individual power modules 1.In other embodiment, another insulation layer may be formed on the sideof the magnetic components 10 of the connection panel facing the chipbefore the bare power chip is mounted thereon, so as to further flattenthe surface of the connection panel with the magnetic components 10.

FIGS. 6A to 6F are schematic cross-sectional views illustrating theprocesses of the manufacturing method of the power module according to athird embodiment of the present disclosure. In the embodiment, thestructures, elements and functions of the manufacturing method of thepower module 1 are similar to those of the manufacturing method of thepower module 1 in FIGS. 5A to 5G and are not redundantly describedherein. Please refer to FIGS. 2 and 6A to 6F. Different from themanufacturing method of the foregoing embodiments, while the firstsurfaces 11 of the plural magnetic components 10 are attached on anauxiliary film 50, the leading pins on the first surfaces 11 of theplural magnetic components 10 can be integrated at the same levelthrough the auxiliary film 50, as shown in FIG. 6A. Moreover, variouscomponents 60 can be disposed at the same level where the pluralmagnetic components 10 are integrated at. The components can beelectronic components (i.e. capacitor, resistor or driver chip),individual conductive blocks, connection panels of metal leading framesor insulation substrates, or circuit boards (i.e. printed circuitboards, insulation metallic substrates or ceramic substrates). Thevarious components 60 and the plural magnetic components 10 areconjoined as a connection panel through the first insulation layer 51,as shown in FIG. 6B. The electrodes on the first surfaces 11 of themagnetic components 10 and the electrodes of the other components 60 arearranged adjacent to each other by attaching on the auxiliary film 50.In addition, the processes illustrated in FIGS. 6C to 6F are identicalto the processes illustrated in FIGS. 5C to 5F, and not redundantlydescribed herein. It is noted that the electrodes of the magneticcomponents 10 and the component 60 are disposed on an identical plane.In the subsequent processes for fan-outing the electrodes of the barepower chips 20, since the depths of the thorough vias thereon areidentical, it benefits great convenience to perform the drilling and themetallization. In case that the components 60 are individual conductiveblocks or connection panel of metal frames, it benefits the effects ofcontrolling height, enhancing structural strength, electrical connectionand enhancing heat-dissipation. In case that the components 60 are aconnection panel of insulation substrates, it benefits the effects ofcontrolling height, enhancing structural strength and reducing the usingamount of the first insulation layer 51. In case that the components 60are circuit boards, it benefits to simplify the conductive sets 40.

On the other hand, in the embodiment, with the arrangement of terminalson the first surfaces 11 of the plural magnetic components 10, itbenefits to compatible the height difference among the plural magneticcomponents 10. FIG. 7 is a schematic cross-sectional view illustrating aconnection panel formed by the plural magnetic components and pluralcomponents. As show in FIG. 7, the magnetic component 10 d and themagnetic component 10 e have different heights and attached on theauxiliary film 50 with the component 60. A connection panel is formedthrough the connection of the first insulation layer 51. The firstsurface 11 of the magnetic component 10 d having the leading pindisposed thereon, the first surface 11 of the magnetic component 10 ehaving the leading pin disposed thereon and the surface 61 of thecomponent 60 having the terminal are coplanar by attaching to theauxiliary film 50. Therefore, while the heights among the magneticcomponent 10 d, the magnetic component 10 e and the component 60 aredifferent, the height difference among there can be compatible bymolding a thicker first insulation layer 51. The subsequent processeswon't be adversely affected. Certainly, the present disclosure is notlimited thereto.

FIG. 8 is a schematic cross-sectional view illustrating a power moduleaccording to a second embodiment of the present disclosure. In theembodiment, the structures, elements and functions of the power module 1a are similar to those of the power module 1 in FIG. 2 and are notredundantly described herein. In the embodiment, the bare power chip 20can include for example a thicker electrode having the thickness morethan 30 μm and disposed on the third surface 21. As to the structure ofthe power module 1 a, while the manufacturing methods of the foregoingembodiments are utilized, the process of forming the through vias in thesecond insulation layer 52 over the bare power chip 20 can be omitted,and it benefits to improve the wiring precision. For example, while thepower module 1 a is produced by the manufacturing method illustrated inFIGS. 6A to 6F, the manufacturing steps of FIGS. 6E to 6F may bedifferent from the foregoing embodiment. In the embodiment, the barepower chip 20 of the power module 1 a includes a thicker electrode 23.After the second insulation layer 52 is formed to cover the bare powerchip 20, as shown in FIG. 6E, the through vias required for theconductive set 40 are formed on the first surface 11 of the magneticcomponent 10 merely. There is no need of forming any through vias on theelectrode 23 for the conductive set 40, but the residue on the surfaceof the electrode 23 has to be removed. Since the height of the electrode23 of the bare power chip 20 is larger, the flat surface can be quicklyobtained by, for example, brushing. Thereafter, a metallized layer isdirectly formed on the surface. It is noted that since the size of theelectrode of the magnetic component 10 is larger, the required positionaccuracy is low. However, the size of the bare power chip 20 is smallerand the required position accuracy is more precise. As to the powermodule 1 a of the present disclosure, the metallized layer can be formedon the area where the electrode 23 of the bare power chip 20 is disposeddirectly, and the process of forming the through via on the thirdsurface 23 of the bare power chip 20 is omitted. Therefore, the wiringdensity of the conductive set 40 can be greatly improved.

FIGS. 9A to 9D are schematic cross-sectional views illustrating theprocesses of the manufacturing method of the power module according to afourth embodiment of the present disclosure. In the embodiment, thestructures, elements and functions of the manufacturing method of thepower module 1 are similar to those of the manufacturing method of thepower module 1 in FIGS. 4A to 4F and are not redundantly describedherein. Please refer to FIGS. 2 and 9A to 9D. In the embodiment, asshown in FIG. 9A, the second surfaces 12 of the plural magneticcomponents 10 are attached to the auxiliary film 50 and the firstsurfaces 11 of the plural magnetic components 10 are exposed and havethe leading pins disposed thereon. Then, as shown in FIG. 5B, the fourthsurfaces 22 of the plural bare power chips 20 are correspondinglyattached on the first surfaces 11 of the plural magnetic components 10.Meanwhile, each magnetic component 10 can provide sufficient mechanicalstrength to support the corresponding bare power chip 20. Afterward, asshown in FIG. 9C, the plural magnetic components 10 and the plural barepower chips 20 are covered by the first insulation layer 51. Finally, asshown in FIG. 9D, the conductive sets 40 are formed on the firstinsulation layer 51, so as to connect the leading pin on the firstsurface 11 of the magnetic component 10 and the electrode on the thirdsurface 21 of the bare power chip 20. Consequently, to fan-out theelectrode of the bare power chip 20 is achieved. Certainly, the varioussteps of the foregoing manufacturing methods may be adjustable accordingto practical requirements, and the manufacturing method of the powermodule of the present disclosure is not limited to the combined steps ofthe foregoing embodiments.

In addition, in the foregoing embodiment, the magnetic component 10 andthe bare power chip 20 of the power module 1 are electrically connectedwith each other through for example a single-layer metallization layer.Certainly, in practical applications, the conductive set 40 is notlimited to a single metallized layer. FIG. 10 is a schematiccross-sectional view illustrating a power module according to a thirdembodiment of the present disclosure. In the embodiment, the structures,elements and functions of the power module 1 b are similar to those ofthe power module 1 in FIG. 2 and are not redundantly described herein.In the embodiment, the power module 1 b further includes a thirdinsulation layer 53 disposed on the second insulation layer 52.Moreover, the conductive set 40 further includes at least one firstconductive metallization layer 40 a and at least one second conductivemetallization layer 40 b, which are disposed on the second insulationlayer 52 and the third insulation layer 53, respectively, andelectrically connected between the leading pin on the first surface 11of the magnetic component 10 and the electrode on the third surface 21of the bare power chip 20. In other embodiment, the conductive set 40further includes more than two metallization layer to extend the fan-outdistance of the pins for external connection, so as to optimizeimpedance and shielding of the circuit. For example, in the applicationof shielding, an electrode connected with the bare power chip 20, forexample a power semiconductor chip, and the magnetic component 10, forexample an inductor, has a floating potential, but is not outputted.Namely, the electrode is not connected with the system board. In thiscase, the first conductive metallization layer 40 a adjacent to themagnetic component 10 can be utilized to achieve the connection ofelectrodes between the magnetic component 10 and the bare power chip 20,and a shielding area is formed on the outer metallization layer relativeto the connection position of wiring. The potential of the shieldingarea can be a floating potential or connected to a static point (theinput, the output or the ground). Certainly, the present disclosure isnot limited thereto.

FIG. 11 is a schematic cross-sectional view illustrating a power moduleaccording to a fourth embodiment of the present disclosure. In theembodiment, the structures, elements and functions of the power module 1c are similar to those of the power module 1 in FIG. 2 and are notredundantly described herein. In the embodiment, the magnetic component10 of the power module 1 c further includes a redistribution layer byperforming metallization on the first surface 11, to form for example aterminal 16, the position of terminal is rearranged. In otherembodiment, the redistribution layer can be utilized to achieve theother wiring functions, so as to simplify the layout of the conductiveset 40. In the embodiment, the leading pin of the magnetic component 10is located around the periphery of the bare power chip 20. In this case,the terminal 16 of the magnetic component 10 can be utilized toredistribute the fan-out pattern of the winding set 13 of the magneticcomponent 10. Thus, it benefits to satisfy the requirements (i.e. theadjustment of size, material and thickness) in the subsequent processes.

FIG. 12 is a schematic cross-sectional view illustrating a power moduleaccording to a fifth embodiment of the present disclosure. In theembodiment, the structures, elements and functions of the power module 1d are similar to those of the power module 1 c in FIG. 11 and are notredundantly described herein. In the embodiment, the winding set 13 ofthe magnetic component 10 of the power module 1 d has the leading endlocated under the fourth surface 22 of the bare power chip 20. Namely,the leading end of the winding set 13 is overlapping with the bare powerchip 20. Moreover, one side of the bare power chip 20 is further out ofrange of the magnetic component 10. In this case, the terminal 16 of themagnetic component 10 can be formed by metallization to redistribute andfan-out the terminal of the magnetic component 10. Thus, the electricalconnection between the electrodes of the magnetic component 10 and thebare power chip 20 is achieved. It should be emphasized that theposition of the bare power chip 20 and the position of the magneticcomponent 10 are at least partially overlapping, so as to reduce theoccupied space. The bare power chip 20 can be included completely in theprojected envelopment of the magnetic component 10, or has one side ormultiple sides out of the projected envelopment of the magneticcomponent 10. The portion of the bare power chips 20, which is out ofthe projected envelopment of the magnetic component 10, can be supportedby forming the first insulation layer 51 to provide the mechanicalstrength. Namely, the bare power chip 20 is included in a projectedenvelopment combined by the magnetic component 10 and the firstinsulation layer 51. Certainly, the present disclosure is not limitedthereto and not redundantly described herein.

FIG. 13 is a schematic cross-sectional view illustrating a power moduleaccording to a sixth embodiment of the present disclosure. In theembodiment, the structures, elements and functions of the power module 1e are similar to those of the power module 1 in FIG. 2 and are notredundantly described herein. In the embodiment, the power module 1 eincludes a first bare power chip 20 a and a second bare power chip 20 b,so that to carry plural bare power chips in a single module is achieved.In the embodiment, the first bare power chip 20 a and the second barepower chip 20 b can be for example bare semiconductor chips, driverchips or control chips. In other embodiment, the first bare power chip20 a and the second bare power chip 20 b can include a passivecomponent, such as a resistor, a capacitor or other electroniccomponents. It should be emphasized that the size, the number and thearrangement of the first bare power chip 20 a and the second bare powerchip 20 b are adjustable according to practical requirements, and thepresent disclosure is not limited thereto.

FIG. 14 is a schematic cross-sectional view illustrating a power moduleaccording to a seventh embodiment of the present disclosure. In theembodiment, the structures, elements and functions of the power moduleif are similar to those of the power module 1 e in FIG. 13 and are notredundantly described herein. In the embodiment, the power module ifincludes a first bare power chip 20 a and a second bare power chip 20 b,which have different thicknesses. The thickness of the second bare powerchip 20 b is larger than the thickness of the first bare power chip 20a. For carrying the first bare power chip 20 a and the second bare powerchip 20 b having different thicknesses, the magnetic component 10further includes a recess 11 a disposed on the first surface 11. Whilethe second bare power chip 20 b is attached to the first surface 11 ofthe magnetic component 10, the second bare power chip 20 b is partiallyreceived within the recess 11 a, so as to eliminate the heightdifference between the first bare power chip 20 a and the second barepower chip 20 b. It should be emphasized that the size, the number andthe arrangement of the recess 11 a are adjustable according to practicalrequirements, and the present disclosure is not limited thereto.

FIG. 15 is a schematic cross-sectional view illustrating a power moduleaccording to an eighth embodiment of the present disclosure. In theembodiment, the structures, elements and functions of the power module 1g are similar to those of the power module 1 in FIG. 2 and are notredundantly described herein. In the embodiment, the power module 1 gincludes a first magnetic component 10 a and a second magnetic component10 b, so that to carry plural magnetic components in a single module isachieved. In the embodiment, the first magnetic component 10 a includesat least two electrodes 13 a and the second magnetic component 10 bincludes at least two electrodes 13 b. The at least two electrodes 13 aand the at least two electrodes 13 b are disposed on the area uncoveredby the bare power chip 20. Namely, the positions of the at least twoelectrodes 13 a and the at least two electrodes 13 b are not overlappingwith the bare power chip 20. In some other embodiments, the single oneof the first magnetic component 10 a or the second magnetic component 10b further includes multiple magnetic component units integrated therein.Namely, a plurality of inductor units or transformer units areintegrated within the first magnetic component 10 a or the secondmagnetic component 1 b, and corresponding to the electrodes 13 a and theelectrodes 13 b, respectively, for example as the input electrodes andthe output electrodes. In the embodiment, the electrodes 13 a and theelectrodes 13 b are fanned out to be disposed in an area uncovered bythe bare power chip 20. Certainly, in other embodiments, the fan-outposition may also be redistributed by an additional metallization layer,which is described above and disposed on the first surface 11 of themagnetic component 10. It is noted that, according to the description ofthe foregoing various embodiments, the power module 1 of the presentdisclosure can integrate a plurality of magnetic components 10 and aplurality of bare power chips 20 in a single stacked structure, but notredundantly described herein.

FIG. 16 is a schematic cross-sectional view illustrating a power moduleaccording to a ninth embodiment of the present disclosure. In theembodiment, the structures, elements and functions of the power module 1h are similar to those of the power module 1 in FIG. 2 and are notredundantly described herein. In the embodiment, the power module 1 hfurther includes a component 62, which is covered by the firstinsulation layer 51 and arranged at the identical level with themagnetic component 10. The component 62 can be, for example, a resistor,a capacitor, a driver chip, or the other similar device. In theembodiment, the component 62 is, for example, a resistor/capacitorassembly having two ports 62 a disposed horizontally with the magneticcomponent 10. Consequently, the surface of the component 62 having thetwo ports 62 a disposed thereon and the first surface 11 of the magneticcomponent 10 having the leading pin disposed thereon are coplanar.Certainly, the present disclosure is not limited thereto.

FIG. 17 is a schematic cross-sectional view illustrating a power moduleaccording to a tenth embodiment of the present disclosure. In theembodiment, the structures, elements and functions of the power module 1k are similar to those of the power module 1 in FIG. 2 and are notredundantly described herein. In the embodiment, the power module 1 k isfor example a typical buck circuit and includes an electronic component63 such as an input capacitor or an output capacitor. In order to reducethe occupied space of the power module 1 k, the electronic component 63,such as the capacitor, is further stacked on the stack of the bare powerchip 20 and the magnetic component 10 along a thickness direction.Moreover, a connection component 43 is further provided and disposedaround the electronic component 63, to make sure that the distancebetween the electrodes of the power module 1 k and the system board (notshown) is larger than or equal to the thickness of the electroniccomponent 63. In an embodiment, the connection component 43 can be asolder ball (i.e. no-core solder ball or solder ball with core, whereinits shape can be for example but not limited to a spherical shape, acylindrical shape, a polyhedron or an ellipsoid). In the embodiment, theconnection component 43 may be for example, a solder ball with metallic(i.e. copper) core to ensure the height thereof. On the other hand, inorder to ensure that there is a smaller increase in height, theelectronic component 63 can be, for example, a silicon-based chipcapacitor, or an ultra-thin laminated ceramic capacitor, as shown inFIG. 17. The present disclosure is not limited thereto.

FIG. 18 is a schematic cross-sectional view illustrating a power moduleaccording to an eleventh embodiment of the present disclosure. In theembodiment, the structures, elements and functions of the power module 1m are similar to those of the power module 1 k in FIG. 17 and are notredundantly described herein. In the embodiment, the fourth surface 22of the bare power chip 20 of the power module 1 m is mounted directly onthe first surface 11 of the magnetic component 10. The electrode 17disposed on the first surface 11 of the magnetic component 10 and theelectrode disposed on the third surface 21 of the bare power chip 20 areelectrically connected to the system board (not shown) directly throughthe connection component 44 and the connection component 45,respectively. Consequently, the connection between the magneticcomponent 10 and the bare power chip 20 through the system board isachieved. In an embodiment, the height of the connection component 44 islarger than the height of the connection component 45, so that allconnection surfaces between the connection components and the systemboard tends to be a plane. The connection component 44 and theconnection component 45 can be for example typical solder balls orsolder balls with cores (i.e. metallic cores or resin cores). In theembodiment, the connection component 44 connected with the magneticcomponent 10 can be for example a solder ball having a metal (i.e.copper) core, so as to ensure the height for installation and increasethe conductivity. The connection component 45 connected with the barepower chip 20 can be for example a typical solder ball without core. Itshould be further explained that when plural connection components 44are implemented in the power module 1 m, a part of the plural connectioncomponents 44 (located at the outermost corners of the four sides) canbe solder balls with metal cores. The shapes of the connection component44 and the connection component 45 can be for example but not limited toa spherical shape, a cylindrical shape, a polyhedron or an ellipsoid. Inaddition, the electrode 17 of the magnetic component 10 can be led fromthe position of its original pin or redistributed on the first surface11 of the magnetic component 10 through a metallization layer. Themetallization layer is utilized to achieve the redistribution of theposition of pin, the integration with other wiring or carrying thedevice, such as an input capacitor, an output capacitor or a resistor.It should be emphasized that the metallization layer is not limited toone layer or multiple layers, wherein an insulation layer can bedisposed between layer and layer to insulate the multiple layers witheach other, and a conductive via can be disposed between the multiplelayers to achieve the connection. The multiple layers can be utilized toprovide the functions of wiring or achieve the effect of EMI shielding.The present disclosure is not limited thereto and not redundantlydescribed herein. Briefly, the manufacture of the power module 1 m canbe carried out as follows. Firstly, magnetic components 10 are fixed ona carrier (not shown) and each bare power chip 20 is attached to themagnetic component 10 through an adhesion layer 30, such as an organicbonding material or a solder. The connection component 44 and theconnection component 45 are formed on the electrode 17 on the firstsurface 11 of the magnetic component 10 and the electrode on the thirdsurface 21 of the bare power chip 20, respectively, by a ball placementtechnique. After the carrier is removed, the individual power module 1 mis obtained. In an embodiment, the connection component 45 on the barepower chip 20 can be, for example, a preset solder ball. Only theconnection component 44 needs to be disposed on the magnetic component10 when manufacturing the power module 1 m. In other embodiments, theconnection component 44 can also be preset on the magnetic component 10,and the connection component 45 is also preset on the bare power chip20. In the subsequent processes to assemble the power module 1 m, nomore ball displacement is required. The present disclosure is notlimited thereto.

It is noted that in the structure of the power module 1 m, since thebare power chip 20 is directly mounted on the first surface 11 of themagnetic component 10 by the adhesion layer 30 and the magneticcomponent 10 provides a sufficient mechanical strength to support thebare power chip 20, the bare power chip 20 can be for example a chipthat requires less structural strength. In an embodiment, the bare powerchip 20 can be, for example, a bare packaged semiconductor chip, and itsthickness can be reduced to a specific thickness, for example, 200 μm orless. In other embodiments, the thickness of the bare power chip 20 canbe controlled to be 100 μm or less. In the embodiment, the electrodes ofthe bare power chip 20 can be directly fanned out to the system board(not shown) through the connection component 45. The pitch of theadjacent electrodes of the bare power chip 20 should meet therequirement of system. The creepage distance should meet a specificrequirement, for example, 200 μm or more. Therefore, in order to meetthe requirement of the pin number, in an embodiment, the electrodes arearranged in an array so as to meet the requirement of the pin number andincrease the creepage distance therebetween at the same time. Itachieves convenience in manufacturing.

FIG. 19 is a schematic cross-sectional view illustrating a power moduleaccording to a twelfth embodiment of the present disclosure. In theembodiment, the structures, elements and functions of the power module 1n are similar to those of the power module 1 k in FIG. 17 and are notredundantly described herein. In the embodiment, the magnetic component10 and the bare power chip 20 of the power module 1 n are connected withthe system board (not shown) through the connection component 44 and theconnection component 45, respectively. Moreover, the magnetic component10 and the bare power chip 20 are electrically connected with each otherthrough a wire bond 46. Certainly, the wire bond 46 can be furtherprotected by potting or molding. The present disclosure is not limitedthereto.

FIG. 20 is a schematic cross-sectional view illustrating a power moduleaccording to a thirteenth embodiment of the present disclosure. In theembodiment, the structures, elements and functions of the power module 1p are similar to those of the power module 1 in FIG. 2 and are notredundantly described herein. In the embodiment, the power module 1 pincludes a structure having double-side fan-out terminals. At least onemetallization layer 47 is formed on the first surface 11 or the secondsurface 12 of the magnetic component 10, wherein the bare power chip 20is mounted on the first surface 11. The conductive set 40 disposed onthe first surface 11 and the metallization layer 47 disposed on thesecond surface are connected with each other through a pre-setconductive block 48. Certainly, in other embodiments, the conductiveblock 48 can also be implemented by through-hole plating, but thepresent disclosure is not limited thereto. With the structure havingdouble-side fan-out terminals, the power module 1 p can be connected tothe system board (not shown) through the second surface 12, and a heatsink (not shown) can be mounted on the first surface 11 to dissipate theheat generated by the power module 1 p. Thus, the operating temperatureof the power module 1 p is reduced, and the performance and reliabilityof the power module 1 p are improved. Certainly, in other embodiments,devices such as resistors, capacitors, driver devices, and controldevices can be mounted on the first surface 11 to further expand thefunction of the power module 1 p. Alternatively, a plurality of powermodules 1 p are stacked together to achieve the effect of expanding thepower.

FIG. 21 is a schematic cross-sectional view illustrating a power moduleaccording to a fourteenth embodiment of the present disclosure. In theembodiment, the structures, elements and functions of the power module 1r are similar to those of the power module 1 p in FIG. 20 and are notredundantly described herein. In the embodiment, the power module 1 rincludes a structure having double-side fan-out terminals, similarly.Different from the power module 1 p of FIG. 20, the bare power chip 20is disposed on the second surface 12 of the magnetic component 10, andthe leading pins of the magnetic component 10 are disposed on the firstsurface 11 of the magnetic component 10 and away from the second surface12 having the bare power chip 20 disposed thereon. The electrodes of thebare power chip 20 can be in connection with the magnetic component 10by for example, the conductive set 40, the conductive block 48 and themetallization layer 47. In addition, in the embodiment, the electrodesof the power module 1 r connected to the system board (not shown) can bedisposed adjacent to the first surface 11 or adjacent to the secondsurface 12. In other words, the two metallization layers of theconductive set 40 and the metallization layer 47 are disposed on thefirst surface 11 and the second surface 12 of the magnetic component 10,respectively, and in connection with each other through the conductiveblock 58 disposed within the first insulation layer 51. It facilitatesthe power module 1 r to meet the requirements of the double-side fan-outterminals. It should be emphasized that the application of thedouble-side fan-out terminals applied to the bare power chip 20 and themagnetic component 10 of the power module 1 r of the present disclosureare adjustable according to the practical requirements, but not limitedthereto.

FIG. 22 is a schematic cross-sectional view illustrating a power moduleaccording to a fifteenth embodiment of the present disclosure. In theembodiment, the structures, elements and functions of the power module 1s are similar to those of the power module 1 in FIG. 2 and are notredundantly described herein. In the embodiment, the power module 1 sincludes at least one metallization layer 18 disposed on the firstsurface 11 of the magnetic component 10. In another embodiment, themetallization layer 18 is formed on a plane constructed by the magneticcomponent 10 and the first insulation layer 51 together. In otherembodiment, the metallization layer 18 may be for example amultiple-layer structure. The present disclosure is not limited thereto.Moreover, in the embodiment, the bare power chip 20 can be for example aflip-chip power semiconductor chip. The bare power chip 20 furtherincludes a metal bump 24, such as copper bump, disposed on the thirdsurface 21 flipped. The bare power chip 20 is electrically connected tothe magnetic component 10 through the metal bump 24 and themetallization layer 18. The bonding material (e.g., a solder material)between the metal bumps 24 and the metallization layer 18 is not shownin the drawing. It is noted that in the embodiment, in order to increasethe structural reliability, the flip-chip bare power chip 20 isconnected by, for example, the metal bump 24, which can eliminate therisk of reliability due to the increasing amount of solder. Moreover,the gap between the third surface 21 of the bare power chip 20 and themetallization layer 18 can be protected by forming an under-fill layer,or directly filled with the second insulation layer 52. The electrodesof the power module 1 s are connected by, for example, the conductivevia 49 and the metallization layer 18 on the magnetic component 10. Itshould be emphasized that in the embodiment, the connection path of theelectrodes connected between the magnetic component 10 and the barepower chip 20 can be set relatively close to reduce the transmissionimpedance. In addition, the requirement for the electrode fan-outposition of the magnetic component 10 is also eliminated, and theconvenience of manufacturing the magnetic component 10 is increased.

FIG. 23 is a schematic cross-sectional view illustrating a power moduleaccording to a sixteenth embodiment of the present disclosure. In theembodiment, the structures, elements and functions of the power module 1t are similar to those of the power module 1 in FIG. 2 and are notredundantly described herein. Different from the power module 1 of FIG.2, in the embodiment, the power module 1 t omits the first insulationlayer 51 (referring to FIG. 2), which is adjacent to the lateral wallsof the magnetic component 10. The insulation layer 51 can besimultaneously removed, for example, in the process of dividing theconnection panel shown in FIG. 5G, so as to further reduce the occupiedspace of the power module 1 t, as shown in FIG. 23. In other embodiment,firstly, a connection panel (not shown) of the magnetic component 10 isprovided as a substrate. The connection panel of the magnetic component10 can be, for example, mainly composed of a magnetic material identicalto the main body 14. The desired winding set 13 is integrated therein.Alternatively, a metallization process is utilized on the surface of theconnection panel to form the desired winding set 13. Thereafter, thebare power chips 20 are attached correspondingly on the magneticcomponent 10, the second insulation layer 52 is laminated thereon, andthe conductive set 40 is formed by the through vias and the metallizedwiring. Finally, the connection panel is divided to obtain a pluralityof power modules 1 t. The present disclosure is not limited thereto.

FIG. 24 is a schematic cross-sectional view illustrating a power moduleaccording to a seventeenth embodiment of the present disclosure. In theembodiment, the structures, elements and functions of the power module 1t are similar to those of the power module 1 in FIG. 2 and are notredundantly described herein. In the embodiment, the power module 1 ufurther includes a protection layer 70 disposed on the second surface 12of the magnetic component 10. The material of the protection layer 70can be identical as or different from the material of the firstinsulation layer 51 or the second insulation layer 52. The presentdisclosure is not limited thereto and not redundantly described herein.In an embodiment, the protection layer 70 is constructed by theauxiliary film 50 utilized in the manufacturing processes shown in FIGS.4A to 4F. The present disclosure is not limited thereto.

Based on the foregoing descriptions, it is understood that the powermodule 1 of the present disclosure is adjustable according to practicalrequirements. In the case of a typical buck circuit, the power module 1of the present disclosure may have circuit variations similar to thoseshown in FIGS. 25A to 25C for different applications. For example,multiple sets of switching devices can be configured with one inductor(as shown in FIG. 25A), one set of switching device can be configuredwith multiple inductors (as shown in FIG. 25B), or multiple sets ofswitching devices can be configured with multiple inductors (as shown inFIG. 25C). The structural design of the power module and the design ofthe circuit pattern of the present disclosure can be slightly modifiedto achieve the different applications. In the case of the configurationwith multiple inductors, a plurality of individual inductors or coupledinductors can be implemented by a circuit pattern design. The presentdisclosure is not limited thereto.

In summary, the present disclosure provides a power module and amanufacturing method thereof. With the magnetic component carrying thebare power chip thereon, the connection of the magnetic component andthe bare power chip can be optimized and integrated, so that a powermodule with high efficiency and high powder density is achieved. Theoccupied space of the power module relative to the system motherboardcan be decreased, so that the products with the power module is morecompetitive. Moreover, the optimized and integrated power module can bevaried to meet different application requirements, increase the designvariability and further optimize the circuit characteristics of thepower module. Meanwhile, more functions are integrated into the powermodule. In addition, by conjoining into a connection panel, itsimplifies the art of carrying the bare power chip on the magneticcomponent, so as to improve the production efficiency, and facilitate toachieve the purposes of assembling the optimized power module andreducing the manufacturing cost thereof.

While the disclosure has been described in terms of what is presentlyconsidered to be the most practical and preferred embodiments, it is tobe understood that the disclosure needs not be limited to the disclosedembodiment. On the contrary, it is intended to cover variousmodifications and similar arrangements included within the spirit andscope of the appended claims which are to be accorded with the broadestinterpretation so as to encompass all such modifications and similarstructures.

What is claimed is:
 1. A manufacturing method of a power module,comprising steps of: (a) providing plural magnetic components, whereineach of the plural magnetic components comprises a first surface and asecond surface and the first surface is opposite to the second surface;(b) forming at least one insulation layer around the plural magneticcomponents to conjoin the plural magnetic components into a connectionpanel, wherein the first surfaces of the plural magnetic components arecoplanar or the second surfaces of the plural magnetic components arecoplanar; (c) providing plural bare power chips disposed correspondinglyon the plural magnetic components, wherein each of the plural bare powerchips comprises a third surface and a fourth surface and the thirdsurface is opposite to the fourth surface, wherein one of the thirdsurface and the fourth surface of the bare power chip is at leastpartially attached on one of the first surface and the second surface ofthe corresponding magnetic component, and one of the third surface andthe fourth surface of the bare power chip is at least partially includedin a projected envelopment of the corresponding one of the first surfaceand the second surface of the corresponding magnetic component, so as tofacilitate the corresponding magnetic component to support the barepower chip; (d) forming at least one second insulation layer to coverthe plural bare power chips; (e) forming plural conductive sets disposedon the at least one second insulation layer, wherein the pluralconductive sets are electrically connected with the plural bare powerchips and the plural magnetic components; and (f) dividing the at leastone first insulation layer and the at least one second insulation layerto obtain plural power modules.
 2. The manufacturing method of the powermodule according to claim 1, wherein the power module comprises anadhesion layer and the bare power chip is attached to the correspondingmagnetic component through the adhesion layer at the step (c).
 3. Themanufacturing method of the power module according to claim 1, whereinthe step (a) further comprises a step of (a0) providing an auxiliaryfilm to carry and arrange the plural magnetic components thereon.
 4. Themanufacturing method of the power module according to claim 1, whereinthe step (a) further comprises a step of (a1) providing an auxiliaryfilm to carry and arrange the plural magnetic components thereon,wherein the first surfaces of the plural magnetic components arecoplanar and attached to the auxiliary film or the second surfaces ofthe plural magnetic components are coplanar and attached to theauxiliary film, wherein the step (b) further comprises a step of (b1)removing the auxiliary film after conjoining the plural magneticcomponents and the at least one first insulation layer into theconnection panel.
 5. The manufacturing method of the power moduleaccording to claim 4, wherein the auxiliary film is arranged under theplural magnetic components at the step (a1), wherein the step (b)further comprises a step (b2) of turning over the connection panel. 6.The manufacturing method of the power module according to claim 5,wherein the step (a) further comprises a step of (a2) providing at leastone component arranged on the auxiliary film, wherein a surface of theat least one component and the first surfaces of the plural magneticcomponents are coplanar or the surface of the at least one component andthe second surfaces of the plural magnetic components are coplanar. 7.The manufacturing method of the power module according to claim 1,wherein the at least one conductive set comprises at least oneconductive via and at least one metallization layer, the at least onemetallization layer is disposed on the second insulation layer, and theat least one metallization layer is connected to one of the bare powerchip and the magnetic component through the at least one conductive via.8. The manufacturing method of the power module according to claim 1,wherein the conductive set comprises at least one first metallizationlayer, and the step (e) further comprises steps of (e1) forming a thirdinsulation layer disposed on the second insulation layer; and (e2)forming at least one second metallization layer disposed on the thirdinsulation layer, wherein the at least one first metallization layer andthe at least one second metallization layer are electrically connectedwith each other, wherein the at bare power chip and the correspondingmagnetic component are electrically connected with each other throughthe at least one first metallization layer.
 9. A manufacturing method ofa power module, comprising steps of: (a) providing an auxiliary film andplural magnetic components and arranging the plural magnetic componentson the auxiliary film to form a connection panel, wherein each of theplural magnetic components comprises a first surface and a secondsurface and the first surface is opposite to the second surface, whereinthe second surfaces of the plural magnetic components are attached onthe auxiliary film; (b) providing plural bare power chips disposedcorrespondingly on the plural magnetic components, wherein each of theplural bare power chips comprises a third surface and a fourth surfaceand the third surface is opposite to the fourth surface, wherein one ofthe third surface and the fourth surface of the bare power chip is atleast partially attached on one of the first surface and the secondsurface of the corresponding magnetic component, and one of the thirdsurface and the fourth surface of the bare power chip is at leastpartially included in a projected envelopment of the corresponding oneof the first surface and the second surface of the correspondingmagnetic component, so as to facilitate the corresponding magneticcomponent to support the bare power chip; (c) forming at least one firstinsulation layer to cover the plural magnetic components and the pluralbare power chips; (d) forming plural conductive sets disposed on the atleast one first insulation layer, wherein the plural conductive sets arespatially corresponding to and electrically connected with the pluralbare power chips and the plural magnetic components; and (e) dividingthe at least one first insulation layer and removing the auxiliary filmto obtain plural power modules.
 10. The manufacturing method of thepower module according to claim 9, wherein the power module comprises anadhesion layer and the bare power chip is attached to the correspondingmagnetic component through the adhesion layer at the step (b).
 11. Apower module comprising: at least one magnetic component comprising amain body, at least one winding set, a first surface and a secondsurface, wherein the at least winding set winds on the main body, andthe first surface is opposite to the second surface; at least one barepower chip disposed on the at least one magnetic component andcomprising a third surface and a fourth surface, wherein the thirdsurface is opposite to the fourth surface; at least one first connectioncomponent electrically connected with the at least one bare power chip;and at least one second connection component electrically connected withthe at least magnetic component, wherein the first connection componentconnected with the at least one bare power chip has a height less than aheight of the second connection component connected with the at leastone magnetic component; wherein one of the third surface and the fourthsurface of the at least one bare power chip is at least partiallyattached on one of the first surface and the second surface of the atleast one magnetic component, and one of the third surface and thefourth surface of the at least one bare power chip is at least partiallyincluded in a projected envelopment of the corresponding one of thefirst surface and the second surface of the at least one magneticcomponent, so as to facilitate the at least one magnetic component tosupport the at least one bare power chip.
 12. A manufacturing method ofa power module, comprising steps of: (a) providing an auxiliary film andplural magnetic components and arranging the plural magnetic componentson the auxiliary film to form a connection panel, wherein each of theplural magnetic components comprises a first surface and a secondsurface and the first surface is opposite to the second surface, whereinthe second surfaces of the plural magnetic components are attached onthe auxiliary film; (b) providing plural bare power chips disposedcorrespondingly on the plural magnetic components, wherein each of theplural bare power chips comprises a third surface and a fourth surfaceand the third surface is opposite to the fourth surface, wherein one ofthe third surface and the fourth surface of the bare power chip is atleast partially attached on one of the first surface and the secondsurface of the corresponding magnetic component, and one of the thirdsurface and the fourth surface of the bare power chip is at leastpartially included in a projected envelopment of the corresponding oneof the first surface and the second surface of the correspondingmagnetic component, so as to facilitate the corresponding magneticcomponent to support the bare power chip; (c) providing pluralconnection components spatially corresponding to and electricallyconnected with the plural bare power chips and the plural magneticcomponents, respectively; and (d) removing the auxiliary film to obtainplural power modules.